Initialising ...
Initialising ...
Initialising ...
Initialising ...
Initialising ...
Initialising ...
Initialising ...
synchrotron radiation photoelectron spectroscopy study of the oxidation of the Ge(100)-2
1 surface by supersonic molecular oxygen beamsYoshigoe, Akitaka; Teraoka, Yuden; Okada, Ryuta; Yamada, Yoichi*; Sasaki, Masahiro*
Journal of Chemical Physics, 141(17), p.174708_1 - 174708_7, 2014/11
Times Cited Count：8 Percentile：29.6(Chemistry, Physical)
synchrotron radiation photoelectron spectroscopy was performed during the oxidation of the Ge(100)-21 surface induced by a molecular oxygen beam with various incident energies up to 2.2 eV from the initial to saturation coverage of surface oxides. The saturation coverage of oxygen on the clean Ge(100) surface was much lower than one monolayer and the oxidation state of Ge was +2 at most. This indicates that the Ge(100) surface is in strong contrast to Si surfaces. The direct adsorption process can be activated by increasing the translational energy, resulting in an increased population of Ge
and a higher final oxygen coverage. Our findings will contribute to the fundamental understanding of oxygen adsorption processes at 300 K from the initial stages to saturated oxidation.
gasYoshigoe, Akitaka; Okada, Ryuta; Teraoka, Yuden; Yamada, Yoichi*; Sasaki, Masahiro*
no journal, ,
Ge has received much attention as promising substitute material for future electronic devices because of its high carrier mobility. We report synchrotron radiation photoelectron spectroscopy study on the oxides of Ge(100)-21 surface fabricated with pure O at 300 K and its incident energy dependence. We found that saturated coverage is less than one monolayer. We reveal that Ge oxidation state in saturation is +2 at most, which exhibits a strong contrast to Si. The Ge population and oxygen coverage increased with incident energy. Our findings are potentially useful for precisely fabricating Ge oxides with submonolayer thickness.
